4H-SiC Trench Schottky Diodes for Next Generation Products
作者:Zhang, QC (Zhang, Qingchun (Jon))[ 1 ] ; Duc, J (Duc, Jennifer)[ 1 ] ; Mieczkowski, V (Mieczkowski, Van)[ 1 ] ; Hull, B (Hull, Brett)[ 1 ] ;Allen, S (Allen, Scott)[ 1 ] ; Palmour, J (Palmour, John)[ 1 ]

编者:Lebedev, AA; Davydov, SY; Ivanov, PA; Levinshtein, ME

SILICON CARBIDE AND RELATED MATERIALS 2012

丛书: Materials Science Forum

卷: 740-742
 页: 781-784
DOI: 10.4028/www.scientific.net/MSF.740-742.781

出版年: 2013