首 页 >> 单篇全文
Bulk crystal growth, epitaxy, and defect reduction in silicon carbide materials for microwave and power devices
[2014-09-15]
Sumakeris, J. J., J. R. Jenny, et al. (2005). "Bulk crystal growth, epitaxy, and defect reduction in silicon carbide materials for microwave and power devices." Mrs Bulletin 30(4): 280-286
1514390482.pdf
1514390482.pdf