On-axis homoepitaxial growth of 4H-SiC PiN structure for high power applications
作者:Hassan, J.U.; Booker, I.; Lilja, L.; Hallen, A.; Fagerlind, M.; Bergman, P.; Janzen, E.

Materials Science Forum

卷: 740-742 
  页: 173-6 
DOI: 10.4028/www.scientific.net/MSF.740-742.173 

出版年: 2013