Materials Issues for Vertical Gallium Nitride Power Devices
作者: Williams, Adrian D.; Moustakas, Theodore D.
编者: Shenai, K; Dudley, M; Bakowski, M; 等.
会议: 3rd Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies as part of the Fall Meeting of the Electrochemical-Society (ECS)会议地点: San Francisco, CA会议日期: OCT 28-31, 2013
会议赞助商: Electrochem Soc; Electrochem Soc, Elect & Photon Div; Electrochem Soc, Dielectr Sci & Technol Div; US Natl Sci Fdn; IEEE Power Elect Soc
GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 3 丛书: ECS Transactions 卷: 58 期: 4 页: 427-438 出版年: 2013