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MOCVD Growth of GaN on Sapphire Using a Ga2O3 Interlayer [2014-06-12] |
| MOCVD Growth of GaN on Sapphire Using a Ga2O3 Interlayer 作者: Tsai, Tsung-Yen; Ou, Sin-Liang; Hung, Ming-Tsung; 等. JOURNAL OF THE ELECTROCHEMICAL SOCIETY 卷: 158 期: 11 页: H1172-H1178 出版年: 2011 12145242253.pdf 12145242253.pdf |
