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Nucleation and Growth Behavior of Atomic Layer Deposited HfO2 Films on Silicon Oxide Starting Surfaces [2014-06-03] |
| L. Nyns, L. Hall, T. Conard, A. Delabie, W. Deweerd, M. Heyns, S. Van Elshocht, N. Van Hoornick, C. Vinckier, and S. De Gendt Nucleation and Growth Behavior of Atomic Layer Deposited HfO2 Films on Silicon Oxide Starting Surfaces J. Electrochem. Soc. 2006 153(9): F205-F209; 314472974.pdf 314472974.pdf |
