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Composition Fluctuation of In and Well-Width Fluctuation in InGaN/GaN Multiple Quantum Wells in Light-Emitting Diode Devices
[2014-04-21]

Composition Fluctuation of In and Well-Width Fluctuation in InGaN/GaN Multiple Quantum Wells in Light-Emitting Diode Devices. 

【作 者】Gu GH;Jang DH;Nam KB;Park CG.
【刊 名】Microsc Microanal
【出版日期】2013
【卷 号】Vol.19
【期 号】Suppl 5
【页 码】99-104
Composition Fluctuation of In and Well-Width Fluctuation in InGaNGaN Multiple Quantum Wells in Light-Emitting Diode Devices..pdf