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High-Quality Uniaxial InxGa1–xN/GaN Multiple Quantum Well (MQW) Nanowires (NWs) on Si(111) Grown by Metal-Organic Chemical Vapor Deposition (MOCVD) and Light-Emitting Diode (LED) Fabrication
[2014-04-15]
High-Quality Uniaxial InxGa1–xN/GaN Multiple Quantum Well (MQW) Nanowires (NWs) on Si(111) Grown by Metal-Organic Chemical Vapor Deposition (MOCVD) and Light-Emitting Diode (LED) Fabrication
ACS Appl. Mater. Interfaces, 2013, 5 (6), pp 2111–2117
DOI: 10.1021/am303056v
Publication Date (Web): February 22, 2013
1515123330.pdf
1515123330.pdf