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Doping concentration of GaN nanowires determined by opto-electrical measurements
[2014-01-16]

Doping concentration of GaN nanowires determined by opto-electrical measurements.

【作 者】Richter T;Meijers HL;Calarco R;Marso M.
【刊 名】Nano letters
【出版日期】2008
【卷 号】Vol.8
【期 号】No.9
【页 码】3056-3059
Doping Concentration of GaN.pdf