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Diameter-Independent Hole Mobility in Ge/Si Core/Shell Nanowire Field Effect Transistors
[2014-01-08]
Diameter-Independent Hole Mobility in Ge/Si Core/Shell Nanowire Field Effect Transistors
Binh-Minh Nguyen *†‡, Yuan Taur ‡, S. Tom Picraux †, and Shadi A. Dayeh
Nano Lett., Article ASAP
DOI: 10.1021/nl4037559
Publication Date (Web): January 1, 2014
8164023754.pdf
8164023754.pdf