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Dependence of the exciton-polariton photoluminescence lineshape in GaAs on epitaxial layer thickness [2014-01-06] |
| Dependence of the exciton-polariton photoluminescence lineshape in GaAs on epitaxial layer thickness 【作 者】W.L. Bloss 【刊 名】Solid State Communications 【出版日期】1985 【卷 号】Vol.54 【期 号】No.1 【页 码】103-105 |
