DYNAMIC CURRENT VOLTAGE CHARACTERISTICS OF PHOTOSENSITIVE LAYER STRUCTURES BASED ON HEAVILY DOPED SI:AS WITH BLOCKED IMPURITY-BAND CONDUCTION 
【作 者】ZHDAN, AG;KOZLOV, AM;KOSTINSKAYA, TA;KOCHEROV, VF;RYLKOV, VV 
【刊 名】SOVIET PHYSICS SEMICONDUCTORS-USSR 
【出版日期】1992 
【卷 号】Vol.26 
【期 号】No.12 
【页 码】1139-1142 

DYNAMIC CURRENT-VOLTAGE CHARACTERISTICS OF PHOTOSENSITIVE LAYER STRUCTURES BASED ON HEAVILY DOPED SI-AS WITH BLOCKED IMPURITY-BAND CONDUCTION.pdf