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Delineating Structural Defects in Highly Doped n-Type 4H-SiC Substrates Usi [2011-09-27] |
| Delineating Structural Defects in Highly Doped n-Type 4H-SiC Substrates Using a Combination of Thermal Diffusion and Molten KOH Etching Electrochem. Solid-State Lett., Volume 7, Issue 11, pp. G264-G265 (2004) 附件下载 |
