| Physica Status Solidi A (印刷版 1971-1991,v.4-128 (缺vol.106,no.1,vol108,v.2); 1992- ,vol.131- (缺vol.143,no.1), 电子版, 1996- )
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1970, vol.1
Quantum size effect–-present state and perspectives of experimental investigations
physica status solidi (a)
Volume 1, Issue 2, pages 199–220, 16 February 1970
1970, vol.2
Temperature effect on space-charge-limited currents in CdSe single crystals
physica status solidi (a)
Volume 2, Issue 1, pages 171–178, 16 May 1970
P. Mačkus, A. Sakalas, A. Smilga, J. Viščakas
1976, vol.37
ELECTRICAL-CONDUCTIVITY AND SEEBECK COEFFICIENT OF SI2TE3 SINGLE-CRYSTALS
作者: ZIEGLER, K (ZIEGLER, K); JUNKER, HD (JUNKER, HD); BIRKHOLZ, U (BIRKHOLZ, U)
来源出版物: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 卷: 37 期: 1 页: K97-K99 DOI: 10.1002/pssa.2210370166 出版年: 1976
PHOTOCONDUCTIVITY OF SI2TE3 SINGLE-CRYSTALS
作者: ZIEGLER, K (ZIEGLER, K); BIRKHOLZ, U (BIRKHOLZ, U)
来源出版物: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 卷: 37 期: 2 页: K147-K149 DOI: 10.1002/pssa.2210370254 出版年: 1976
1977 vol.39
J.Bauer,L.Biste,and D.Bolze,Phys.Status Solidi A 39,173(1977).
1978 vol.48
Crystallization of amorphous silicon films (p 313-321)
U. Köster
1978 vol.49
ELECTRICAL-CONDUCTIVITY OF PASSIVATED SI2TE3 SINGLE-CRYSTALS
作者: BAUER, HP (BAUER, HP); BIRKHOLZ, U (BIRKHOLZ, U)
来源出版物: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 卷: 49 期: 1 页: 127-131 DOI: 10.1002/pssa.2210490114 出版年: 1978
标题: GROWTH AND PROPERTIES OF ALXGA1-XN EPITAXIAL LAYERS
作者: BARANOV B; DAWERITZ L; GUTAN VB; 等.
来源出版物: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 卷: 49 期: 2 页: 629-636 DOI: 10.1002/pssa.2210490226 出版年: 1978
1983 vol.77
Investigations on the Structure of MOCVD AIN Layers on Silicon
出版物physica status solidi (a)
Volume 77, Issue 1, pages 195–199, 16 May 1983
1983 vol.79
Dependence of the Electronic and Optical Properties of Unhydrogenated a-Si on Preparation Conditions
physica status solidi (a) Volume 79, Issue 2, pages 477–482,16 October 1983
S. A. Abo-Namous†, Y. Zaka, R. W. Fane
1983 vol.84
ANISOTROPY OF ELECTRICAL-CONDUCTIVITY IN SI2TE3
作者: RICK, M (RICK, M); ROSENZWEIG, J (ROSENZWEIG, J); BIRKHOLZ, U (BIRKHOLZ, U)
来源出版物: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 卷: 83 期: 2 页: K183-K186 DOI: 10.1002/pssa.2210830260 出版年: 1984
1985 vol.89
Determination of the Electron Effective Mass and Relaxation Time in Heavily Doped Silicon.
physica status solidi (a)
Volume 89, Issue 2, pages 617–622, 16 June 1985
1986 vol.95
Transport phenomena in amorphous silicon doped by ion implantation of 3d metals
physica status solidi (a)
Volume 95, Issue 2, pages 635–640,16 June 1986
1988 vol.108
Phase transformations and ionic transport in the Cu2 − δTe superionic conductor
R. A. Yakshibaev, N. N. Mukhamadeeva, R. F. Almukhametov
physica status solidi (a)
Volume 108, Issue 1, pages 135–141, 16 July 1988
1988 vol.120
HOLE TRAPS PRODUCED BY HIGH-TEMPERATURE HEAT-TREATMENTS OF SILICON ABOVE 1300-DEGREES-C
作者: KAMIURA, Y (KAMIURA, Y); YONETA, M (YONETA, M); HASHIMOTO, F (HASHIMOTO, F)
来源出版物: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 卷: 120 期: 1 页: K11-K14 DOI: 10.1002/pssa.2211200129 出版年: JUL 16 1990
1992 vol.130
Measurement of electron density and mobility in P-d oped a-S i:H and mc-S i:H films
Baojie Yan, Jianyong Liu, Xinhua Geng, Lifeng Shi, Zhonglin Sun, Wenyuan Xu
physica status solidi (a)
Volume 130, Issue 1, pages 133–139, 16 March 1992
1993 vol.135
EFFECT OF EXPERIMENTAL ERRORS ON THE DETERMINATION OF OPTICAL-CONSTANTS OF THIN-FILMS
STICHAUER, L; GAVOILLE, G
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 卷: 135 期: 1 页: K41-K44 出版年: JAN 16 1993
1993 vol.136
General Expression for the Fill Factor of a Real Homojunction Solar Cell Using a Single Exponential Model
A. Kapoor, V. K. Sharma, K. N. Tripathi
physica status solidi (a)
Volume 136, Issue 1, pages 261–266, 16 March 1993
1993 vol.137
Physica status solidi (a)
Volume 137,Issue 2,pages 351-362,16 June 1993.
Studies of the Microstructure in Degraded Buried Heterostructure GaInAsP/InP Laser Diodes and Its Relation with the Lasing Threshold Current
1994 vol.145
Difficulties in Doping SiGe Alloys with Transition Metal Point Defects
physica status solidi (a)
Volume 145, Issue 1, pages K5–K9,16 September 1994
G. Kissinger, H. G. Grimmeiss
1995 vol.149
X-ray topographic identification of dislocation nucleation mechanisms in the heteroepitaxial system GaAs/Ge
N. Burle1, B. Pichaud1, N. Guelton2, R. G. Saint-Jacques2
physica status solidi (a)
Volume 149, Issue 1, pages 123–129, 16 May 1995
1995 vol.152
In-plane photoluminescence of vertical cavity surface-emitting laser structures
S.Gramlich, J.Sebastian, M.Weyers and R.Hey
Physica Status Solidi A vol.152, p.293-301 (1995)
Studies on surface recombination velocity in a heavily doped abrupt n+–p junction
S. S. De, A. K. Ghosh, P. K. Sinha, M. Bera, D. Sil and J. C. Haldar
Volume 146, Issue 2, pages K5–K8, 16 December 1994
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