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Study of defects in LEC-grown undoped SI-GaAs by thermally stimulated curre [2011-05-10] |
| Materials Science and Engineering: B Volume 5, Issue 3, February 1990, Pages 397-408 题目：Study of defects in LEC-grown undoped SI-GaAs by thermally stimulated current spectroscopy 作者：Zhaoqiang Fanga, Lei Shana, T.E. Schlesingera and A.G. Milnes 附件下载 |
