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GaN epitaxial growth on sapphire substrate with Al buffer layer prepared by [2010-03-24] |
| 标题: GaN epitaxial growth on sapphire substrate with Al buffer layer prepared by E-beam evaporation 作者: Hyun-Hee Hwang; Jung-Kyu Kim; Jong-Mun Choi, et al. 来源出版物: Materials Science Forum 页: 935-8 出版年: 2009 附件下载 |
