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Defect structure of epitaxial GaN films determined by transmission electron [2010-12-24] |
| Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry 作者: Metzger T, Hopler R, Born E, Ambacher O, Stutzmann M, Stommer R, Schuster M, Gobel H, Christiansen S, Albrecht M,Strunk HP 来源出版物: PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES 卷: 77 期: 4 页: 1013-1025 出版年: APR 1998 |
