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SiC Epitaxial Layer Growth in a Novel Multi-Wafer VPE Reactor
[2009-09-25]
SiC Epitaxial Layer Growth in a Novel Multi-Wafer VPE Reactor  
Authors: Al A. Burk, Michael J. O'Loughlin, S.S. Mani
Materials Science Forum Volumes 264 - 268
p.83-88
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