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Enhanced light extraction from InGaN/GaN-based light emitting diodes epistr [2010-04-27] |
| Enhanced light extraction from InGaN/GaN-based light emitting diodes epistructure with ICP-etched nanoisland GaN:Mg surface EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS 卷: 50 期: 1 文献编 号: 10301 出版年: APR 2010 附件下载 |
