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Creation of a two-dimensional electron gas at an oxide interface on silicon
[2011-10-18]
Creation of a two-dimensional electron gas at an oxide interface on silicon
AuthorsJ.W. Park, D.F. Bogorin, C. Cen, D.A. Felker, Y. Zhang, C.T. Nelson, C.W. Bark, C.M. Folkman, X.Q. Pan, M.S. Rzchowski, J. Levy, C.B. Eom
ReferenceNat. Commun. 1 : 94 doi:10.1038/ncomms1096 (2010)


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