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Photoelectric properties of selenium doped p+-n-n+ silicon structure
[2011-04-08]

Photoelectric properties of selenium doped p+-n-n+ silicon structure
V.M. Arutyunyana, R.S. Barseghyana, G.E. Grigoryana, V.A. Mkhikyana and B.O. Semerdjiana
Infrared Physics
Volume 29, Issues 2-4, May 1989, Pages 685-688 
 


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