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Mg-doped Al0.85Ga0.15N layers grown by hot-wall MOCVD with low resistivity [2011-02-21] |
Mg-doped Al0.85Ga0.15N layers grown by hot-wall MOCVD with low resistivity at room temperature
来源出版物: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 4 (11): 311-313 NOV 2010
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