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Field characteristics of electron mobility and velocity in InAs/AlGaSb HFET
[2010-05-21]
Field characteristics of electron mobility and velocity in InAs/AlGaSb HFETs with high-k gate insulators 
  Maemoto T, Koyama M, Takahashi H, et al. 
  AIP CONFERENCE PROCEEDINGS 卷: 893 页: 1391-1392 出版年: 2007


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