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Dislocation Analysis in Highly Doped n-Type 4H-SiC by Using Electron Beam I [2011-10-25] |
| Dislocation Analysis in Highly Doped n-Type 4H-SiC by Using Electron Beam Induced Current and KOH+Na2O2 Etching Journal： Materials Science Forum (Volumes 679 - 680) Volume： Silicon Carbide and Related Materials 2010 Pages： 294-297 附件下载 |
