Solid State Communications （印刷版V.1,no.1(June 1963)- ）

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1989 vol.72

Confined excitons, trions and biexcitons in semiconductor microcrystals  Original Research Article
Solid State Communications, Volume 72, Issue 7, November 1989, Pages 645-649
Al.L. Efros, A.V. Rodina

1989 vol.70

Theory of interface-roughness induced subband-edge energy renormalization in thin quantum wells
Solid State Communications
Volume 70, Issue 3, April 1989, Pages 371-374

1989 vol.69

OPTICAL ALIGNMENT OF 2D-ELECTRON MOMENTA IN MULTIPLE QUANTUM WELL STRUCTURES
作者: ZAKHARCHENYA BP; KOPEV PS; MIRLIN DN; 等.
来源出版物: SOLID STATE COMMUNICATIONS 卷: 69 期: 3 页: 203-206 DOI: 10.1016/0038-1098(89)90835-1 出版年: JAN 1989

1988 vol.68
The phonon sidebands of NNi pair emission in GaP:N
Pages 707-710
Zhang Yong, Yu Qi, Zheng Jiansheng, Yan Bingzhang, Wu Boxi, Ge Weikun, Xu Zhongying and, Xu Jizong

1988 vol.65

Oxidation states and Fermi-level pinning on GaAs(110) surface
Solid State Communications
Volume 65, Issue 5, February 1988, Pages 385-388

1987 vol.64

DefectinducedRamantransition in non-stoichiometricGa-richGaAs: Apseudolocalizedvibrationalmode of the GaAsantisite?
J. Wagner, M. Ramsteiner
R.C. Newman
Solid State Communications
Volume 64, Issue 4, October 1987, Pages 459–463

Influence of photo-modulation of reflectance of hetero NIPI superlattices
Yinsheng Tang,  Desheng Jiang, Klaus Ploog
Solid State Communications
Volume 64, Issue 5, November 1987, Pages 655-657

1987 vol.62

Formation of α-Sn by chemical sputtering of β-Sn target in hydrogen plasma
     Solid State Communications
    Volume 62, Issue 4, April 1987, Pages 309–311

1986 vol.60

Edge emission of AlxGa1−xN 
Solid State Communications, Volume 60, Issue 6, November 1986, Pages 509-512
M.R.H. Khan, Y. Koide, H. Itoh, N. Sawaki, I. Akasaki

Metal insulator transition due to surface roughness scattering in a quantum well
A. Gold
Solid State Communications 卷:60 期: 6 页: 531-534 出版年: 1986

vol.57

Strain-generated electric fields in [111] growth axis strained-layer superlattices

期刊：solid state communications
volume 57 page 919

1985 vol.56

Pressure dependence of the acoustic shear mode in GaS by Brillouin
scattering
Solid State Communications
Volume 56, Issue 3, October 1985, Pages 311-313
M. Fischer, A. Polian, A. Chevy and J. C. Chervin

The infrared active localized modes of soliton in trans-(CH)x,
Xin Sun,Chang-qin Wu,Xue-chu Shen,Solid State Communications,Volume 56, Issue 12, December 1985, Pages：1039–1041

1985 vol.55

Magneto-photoluminescence studies of manganese acceptors in GaAs/AlGaAs multiple quantum wells
Solid State Communications
Volume 55, Issue 10, September 1985, Pages 865–868

1985 vol.54

Intermediate valence and kondo features of the Anderson model by perturbation theory
B. Horvatić, V. Zlatić
Solid State Communications
Volume 54, Issue 11, June 1985, Pages 957-960

Electron drift mobility in a-Si:H; Comparison of two measuring techniques
 Wu Daohuai
 Solid State Communications  1985  Vol.54  No.3 p.295-296

1985 vol.53

Self-consistent calculations of charge transfer and alloy scattering-limited mobility in InP-Ga1 − xInxAsyP1 − y single quantum wells
Solid State Communications
Volume 53, Issue 8, February 1985, Pages 727–730

1984 vol.51

Study of persistent photoconductivity effect in n-type selectively doped AlGaAs/GaAs heterojunction
A. Kastalsky, J.C.M. Hwang∗
Solid State Communications
Volume 51, Issue 5, August 1984, Pages 317–322

1983 vol.47

EXCITON MOBILITY EDGE IN CDS1-XSEX SOLID-SOLUTIONS 
  PERMOGOROV S; REZNITSKY A; VERBIN S; 等.
 SOLID STATE COMMUNICATIONS 卷: 47 期: 1 页: 5-9 DOI: 10.1016/0038-1098(83)90084-4 出版年: 1983

1983 vol.46

作者 K. Tsubaki,A. Livingstone, M. Kawashima, H. Okamoto, K. Kumabe
标题 Differential negative resistance caused by inter-subband scattering in a 2-dimensional electron gas
来源出版物 Solid State Communications. Volume 46, Issue 7, May 1983, Pages 517–520

1983 vol.45

Alternating space-charge-limited currents in hydrogenated amorphous silicon 
Solid State Communications, Volume 45, Issue 10, March 1983,Pages 881-884
W. den Boer, A.F.P. Pop

1982 vol.43

Spin dependent carrier capture processes observed by ODMR on the 0.84 eV luminescence in SI-GaAs:Cr
Solid State Communications
Volume 43, Issue 4, July 1982, Pages 261-266

Low-frequency inelastic light scattering from As-S glasses
H. Kawamura, K. Fukumasu, Y. Hamada
Solid State Communications
Volume 43, Issue 3, July 1982, Pages 229-231

Collective modes of a superlattice - plasmons, LO phonon-plasmons, and magnetoplasmons
W.L. Bloss, E.M. Brody
Solid State Communications
Volume 43, Issue 7, August 1982, Pages 523–528

1982 vol.41

H.L. Störmer, A.C. Gossard, W. Wiegmann
标题 Observation of intersubband scattering in a 2-dimensional electron system
来源期刊Solid State Communications. Volume 41, Issue 10, March 1982, Pages 707–709

1981 vol.40

A study of non-thermalized luminescence spectra: the case of Cu2O
N. Caswell
Solid State Communications
Volume 40, Issue 9, December 1981, Pages 843–846

1982 vol.39

The one phonon Raman spectrum in microcrystalline silicon
作者：H. Richter, Z.P. Wang+, L. Ley
Solid State Communications 39（1981）625–629

On the local quasiparticle density of states within the asymmetric Anderson model
Pages 1105-1108
M. Salomaa

1981 vol.38

Optical characterization of interface disorder in  GaAs/Ga1-xAlxAs multi-quantum well structures
Solid State Communications
Volume 38, Issue 8, May 1981, Pages 709-712

Resonance formation in the symmetric Anderson model
Pages 815-818
M. Salomma

1981 vol.37

Change of the electron effective mass in extremely heavily doped n-type Si obtained by ion implantation and laser annealing.
M. Miyao, T. Motooka, N. Natsuaki and T. Tokuyama.
Solid State Communications, Volume 37, Issue 7, February 1981, Pages 605-608

1980 vol.36

INTERSUBBAND SPECTROSCOPY OF 2 DIMENSIONAL ELECTRON GASES - COULOMB INTERACTIONS
PINCZUK A, WORLOCK JM, STORMER HL, DINGLE R, WIEGMANN W, GOSSARD AC 
SOLID STATE COMMUNICATIONS 卷: 36 期: 1 页: 43-46 出版年: 1980

Raman scattering in layered compound 2H-WS2
T. Sekine, T. Nakashizu, K. Toyoda, K. Uchinokura, E. Matsuura
Solid State Communications
Volume 35, Issue 4, July 1980, Pages 371–373

J.A.Caj,R.Planel,and G.Fishman, Solid state communication,29,435(1979)

k-linear coupling and the E′1 transitions in GaAs
D. E. Asnnes and M. Cardona. Solid State Commun. 27,397 (1978)

Caswell, N.; Solin, S. A. Solid State Commun. 1978, 27, 961

Conductivityincrease of amorphousSi and Ge by Mn
T. Shimizu,  M. Kumeda,  I. Watanabe,  K. Kamono       Solid State Communications   Volume 26, Issue 7, May 1978, Pages 445–449

An extension of theoretical description of space-charge-limited currents in insulators 
Solid State Communications, Volume 25, Issue 7, February 1978,Pages 473-475
J. Godlewski, J. Kalinowski

M.Schulz N.M.Johnson
solid state commun.
1978,V.25,pp.481

Giant exciton Faraday rotation in Cd1−xMnxTe mixed crystals  Original Research Article
Solid State Communications, Volume 25, Issue 3, January 1978, Pages 193-195
J. A. Gaj, R. R. Gazka, M. Nawrocki

标题: CRYSTAL-STRUCTURE REFINEMENT OF AIN AND GAN
作者: SCHULZ H; THIEMANN KH
来源出版物: SOLID STATE COMMUNICATIONS  卷: 23   期: 11   页: 815-819   DOI: 10.1016/0038-1098(77)90959-0   出版年: 1977

Electron spin resonance in amorphous Si and Ge doped with Mn
  Solid State Communications   Volume 23, Issue 11, September 1977, Pages 833–835
M. Kumeda,  Y. Jinno,  I. Watanabe,  T. Shimizu

Electron-phonon coupling in highly doped n type silicon
Solid State Communications, Volume 16, Issue 8, 15 April 1975, Pages 1047-1049
M. Jouanne and R. Beserman,I. Ipatova and A. Subashiev View Abstract

Spin-dependent recombination and optical spin orientation in semiconductors  Original Research Article
Solid State Communications, Volume 14, Issue 2, 15 January 1974, Pages 141-144
C. Weisbuch, G. Lampel 

1980 vol.34

标题: TIME-RESOLVED LUMINESCENCE IN AMORPHOUS-SEMICONDUCTORS
作者: STREET RA
来源出版物: SOLID STATE COMMUNICATIONS  卷: 34   期: 3   页: 157-162   DOI: 10.1016/0038-1098(80)91137-0   出版年: 1980

1980 vol.33

 Cr2+(3d4) absorption in GaAs
Solid State Communications
Volume 33, Issue 9, March 1980, Pages 983–985

1978 vol.27

Impulsestimulated “explosive” crystallization of sputterdepositedamorphous (In,Ga)Sb films
C.E. Wickersham, G. Bajor∗, J.E. Greene
Solid State Communications
Volume 27, Issue 1, July 1978, Pages 17–20

1977 vol.23

Preparation of highly photoconductive amorphous silicon by rf sputtering ☆
T.D. Moustakas†,  D.A. Anderson,  William Paul
Division of Applied Sciences, Harvard University Cambridge, Massachusetts 02138, U.S.A.
Solid State Communications     Volume 23, Issue 3, July 1977, Pages 155–158

1977 vol.22

Binding energy of a Mott-Wannier exciton in a polarizable medium
Pages 157-160
C. Aldrich, K.K. Bajaj

Doping, Schottky barrier and pn junction formation in amorphous germanium and silicon by rf sputtering ☆
W. Paul,  A.J. Lewis,  G.A.N. Connell,  T.D. Moustakas
Division of Engineering and Applied Physics, Harvard University Cambridge, Massachusetts 02138, U.S.A
Solid State Communications         Volume 20, Issue 10, December 1976, Pages 969–972

1976 vol.19

Low-frequency lattice vibrations of δ-GaSe compared to ?- and γ-polytypes
A. Polian, K. Kunc, A. Kuhn
Solid State Communications
Volume 19, Issue 11, September 1976, Pages 1079-1082

Photoluminescence from deep centers in GaAs
Solid State Communications
Volume 19, Issue 6, July 1976, Pages 521–524

1975 vol.17

Substitutional doping of amorphous silicon Original Research Article
Solid State Communications, Volume 17, Issue 9, 1 November 1975, Pages 1193-1196
W.E. Spear, P.G. Le Comber 

 1974 vol.15

Lattice vibrations and the crystal structure of GaS and GaSe
E. Finkman?, A. Rizzo
Solid State Communications
Volume 15, Issues 11-12, 15 December 1974, Pages 1841-1845

Refractive index of GaAlAs
Solid state communication 15(59),1974



1974 vol.14

Solid State Communications
      Volume 14, Issue 9, 1 May 1974, Pages 857–860
      Second order Raman spectrum of MoS2
      J.M. Chen, C.S. Wang

1973 vol.13
Long wavelength lattice vibrations in GaS and GaSe
J.C. Irwin, R.M. Hoff, B.P. Clayman, R.A. Bromley

Solid State Communications
Volume 13, Issue 9, 1 November 1973, Pages 1531-1536

Interaction between electronic and vibronic Raman scattering in heavily doped silicon
Solid State Communications, Volume 13, Issue 3, 1 August 1973, Pages 325-328
Fernando Cerdeira, Tor A. Fjeldly, Manuel Cardona

Rigid-layer lattice vibrations and van der waals bonding in hexagonal MoS2
 J. L. Verble and T. J. WietlingP. R. Reed
【刊 名】Solid State Communications
【出版日期】1972
【卷 号】Vol.11
【期 号】No.8
【页 码】941-944

1971 vol.9

DONOR-ACCEPTOR PAIR RECOMBINATION IN GAN
作者: DINGLE R; ILEGEMS M
来源出版物: SOLID STATE COMMUNICATIONS 卷: 9 期: 3 页: 175-& DOI: 10.1016/0038-1098(71)90112-8 出版年: 1971

Raman tensor of germanium and zincblende-type semiconductors
M. Cardona
Solid State Communications
Volume 9, Issue 11, 1 June 1971, Pages 819–822

1970 vol.8

Pseudopotential calculation of the Raman tensor for homopolar semiconductors
L.R. Swanson, A.A. Maradudin
Solid State Communications
Volume 8, Issue 11, 1 June 1970, Pages 859–865

Dielectric Hysteresis in Single Crystal BiFeO3
Solid State Communications vol.8 p.1073-1074 1970

1967 vol.5

Infrared lattice vibration of vapour-grown AlN
I. Akasaki and M. Hashimoto, Solid State Commun. 5, 851 (1967) 

1965 vol.3

On the photoionization of deep impurity centers in semiconductors
G. Lucovsky
Solid State Communications
Volume 3, Issue 9, September 1965, Pages 299-302

MXCROWAVE OSCILLATIONS OF CURRENT IN III-V SEMICONDUCTORS.
J. B. Gunn
Solid State Commum,1963,1:88