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Computational study of electronic properties of X-doped hexagonal boron nitride (h-BN): X = (Li, Be, Al, C, Si)
[2022-10-11]

题目:Computational study of electronic properties of X-doped hexagonal boron nitride (h-BN): X = (Li, Be, Al, C, Si)
期刊:JOURNAL OF MOLECULAR MODELING
卷27;期11;文献号319;
出版时间2021
DOI:10.1007/s00894-021-04938-3



11103958954.pdf