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Growth of High Mobility InN Film on Ga-Polar GaN Substrate by Molecular Beam Epitaxy for Optoelectronic Device Applications [2022-08-26] |
| Growth of High Mobility InN Film on Ga-Polar GaN Substrate by Molecular Beam Epitaxy for Optoelectronic Device Applications Ali Imran,Muhammad Sulaman,Muhammad Yousaf,Muhammad Abid Anwar,Muhammad Qasim,Ghulam Dastgeer,Kossi A. A. Min-Dianey,Baoyu Wang,Xinqiang Wang First published: 25 March 2022 https://doi.org/10.1002/admi.202200105 |
