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Defects in GaN and related materials: perfect dislocations, partial dislocations, dislocation movement and cracks [2022-04-18] |
Defects in GaN and related materials: perfect dislocations, partial dislocations, dislocation movement and cracks 【作 者】Romano, L. T. 【刊 名】EMIS Datarev. Ser. 【出版日期】1999 【卷 号】Vol.23 |