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Defects in GaN and related materials: perfect dislocations, partial dislocations, dislocation movement and cracks
[2022-04-18]

Defects in GaN and related materials: perfect dislocations, partial dislocations, dislocation movement and cracks

【作 者】Romano, L. T.

【刊 名】EMIS Datarev. Ser.

【出版日期】1999

【卷 号】Vol.23

Defects in GaN and related materials_ perfect dislocations, partial dislocations, dislocation movement and cracks.pdf