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Native defects, impurities and doping in GaN and related compounds: general remarks
[2022-04-18]

Native defects, impurities and doping in GaN and related compounds: general remarks

【作 者】Van de Walle, C. G.;Neugebauer, J.;Stampfl, C.

【刊 名】EMIS Datarev. Ser.

【出版日期】1999

【卷 号】Vol.23

Native defects, impurities and doping in GaN and related compounds_ general remarks.pdf