首 页 >> 单篇全文
Effects of interface stoichiometry on the structural and electronic properties of Ga1−xInxSb/InAs superlattices
[2021-11-29]

Effects of interface stoichiometry on the structural and electronic properties of Ga1−xInxSb/InAs superlattices

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 10, 888 (1992)

Effects of interface stoichiometry on the structural and electronic properties of Ga1−xInxSb_InAs superlattices.pdf