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Influence of growth parameters on the residual strain in 3C-SiC epitaxial l [2009-10-27] |
| 题目：Influence of growth parameters on the residual strain in 3C-SiC epitaxial layers on (001) silicon 作者: Wagner G (Wagner, G.)1, Schwarzkopf J (Schwarzkopf, J.)1, Schmidbauer M ( Schmidbauer, M.)1, Fornari R (Fornari, R.)1 来源出版物: SILICON CARBIDE AND RELATED MATERIALS 2007, 卷: 600-603 页: 223-226 附件下载 |
