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RAMAN-SCATTERING FROM INAS/ALSB ULTRATHIN-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
[2021-09-15]

RAMAN-SCATTERING FROM INAS/ALSB ULTRATHIN-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY

作者: IWAI, Y; YANO, M; HAGIWARA, R; 等.

会议: 5TH INTERNATIONAL CONF ON MODULATED SEMICONDUCTOR STRUCTURES ( MSS-5 ) 会议地点: ‏ NARA, JAPAN 会议日期: ‏ JUL 08-12, 1991

会议赞助商: ‏YAMADA SCI FDN

SURFACE SCIENCE  卷: ‏ 267   期: ‏ 1-3   页: ‏ 434-437   出版年: ‏ APR 21 1992

Raman scattering from InAs_AlSb ultrathin-layer superlattices grown by molecular beam epitaxy.pdf