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The effects of threading dislocations and tensile strain in Ge/Si photodete
[2010-12-22]
The effects of threading dislocations and tensile strain in Ge/Si photodetector
作者: Jian-hong Yang; Ying Wei; Xue-yuan Cai; Jin-zhi Ran
来源出版物: Microelectronics International 卷: 27 期: 2 页: 113-16 出版年: 2010
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