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Control of the polarity and surface morphology of GaN films deposited on c-
[2011-10-11]
Control of the polarity and surface morphology of GaN films deposited on c-plane sapphire
作者: Sumiya, M.; Ohnishi, T.; Tanaka, M.; Ohtomo, A.; Kawasaki, M.; Yoshimoto, M.; Koinuma, H.; Ohtsuka, K.; Fuke, S. 
MRS Proceedings (1998), 537: G6.23


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