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DLTS characterization of N-type silicon after rapid thermal annealing of bo
[2012-08-13]
DLTS characterization of N-type silicon after rapid thermal annealing of boron implantation 
作者: Ransom, C.M.; Sedgwick, T.O.; Cohen, S.A. 
MRS Proceedings / Volume 52 / 1985 DOI: http://dx.doi.org/10.1557/PROC-52-153
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