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Low Temperature Direct Bonding of InP and Si 3N 4 coated Silicon Wafers for
[2012-10-12]
题名: Low Temperature Direct Bonding of InP and Si 3N 4 coated Silicon Wafers for Photonic Device Integration
来源: Journal of the Electrochemical Society [0013-4651] Yadong Wang 年: 2012 volume 159, issue 5, H507-H510

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