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ELECTRIC CONDUCTION IN PHOSPHORUS DOPED SILICON AT LOW TEMPERATURES
[2012-02-07]
ELECTRIC CONDUCTION IN PHOSPHORUS DOPED SILICON AT LOW TEMPERATURES
 
作者: YAMANOUC.C (YAMANOUC.C); MIZUGUCH.K (MIZUGUCH.K); SASAKI, W (SASAKI, W)
 
来源出版物: JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN 卷: 22 期: 3 页: 859-& DOI: 10.1143/JPSJ.22.859 出版年: 1967
 

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