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Hillock defects in InGaAs/InP multi-layers grown by MBE
[2020-10-12]

Hillock defects in InGaAs/InP multi-layers grown by MBE

出版物名: Journal of crystal growth 卷: 64 期: 3 页码: 521 - 528 出版日期: 1983 ISS(B)N: 0022-0248  

作者: Saito Hideho, Borland John O, Asahi Hajime, Nagai Haruo, Nawata Kiyoshi

Hillock defects in InGaAs_InP multi-layers grown by MBE.pdf