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Electrical Properties of Ti/Al Ohmic Contacts to Sulfur-Passivated N-Face n [2010-03-19] |
| Electrical Properties of Ti/Al Ohmic Contacts to Sulfur-Passivated N-Face n-Type GaN for Vertical-Structure Light-Emitting Diodes Electrochem. Solid-State Lett., Volume 12, Issue 7, pp. H275-H277 (2009) 附件下载 |
