Phase separation mechanism around dislocation in an InGaN/GaN quantum well structure
作者: Sugahara, T (Sugahara, T); Hao, M (Hao, M); Wang, T (Wang, T); Nakagawa, D (Nakagawa, D); Naoi, Y (Naoi, Y); Nishino, K(Nishino, K); Sakai, S (Sakai, S)
来源出版物: COMPOUND SEMICONDUCTORS 1998  丛书: INSTITUTE OF PHYSICS CONFERENCE SERIES   期: 162   页: 645-650   出版年: 1999