Doping, Schottky barrier and pn junction formation in amorphous germanium and silicon by rf sputtering ☆
W. Paul,  A.J. Lewis,  G.A.N. Connell,  T.D. Moustakas
Division of Engineering and Applied Physics, Harvard University Cambridge, Massachusetts 02138, U.S.A
Solid State Communications         Volume 20, Issue 10, December 1976, Pages 969–972