题目：Alloy clustering and defect structure in the molecular-beam epitaxy of In0.53Ga0.47As on silicon
       作者:GEORGAKILAS A, DIMOULAS A, CHRISTOU A, STOEMENOS J ；
       出处:JOURNAL OF MATERIALS RESEARCH  ；
        Vol：7； Issue:8; Page:2194; 出版年：1992