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High-performance multi-wafer SiC epitaxy - First results of using a 10x100m [2010-08-19] |
| 标题: High-performance multi-wafer SiC epitaxy - First results of using a 10x100mm reactor 作者: Hecht, C; Stein, R; Thomas, B, et al. 会议信息: 13th International Conference on Silicon Carbide and Related Materials, 日期: OCT 11-16, 2009 Nurnberg GERMANY 来源出版物: SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 卷: 645-648 页: 89-94 出版年: 2010 附件下载 |
