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Defect Reduction in Semipolar (11-22) GaN Grown on m-Sapphire Using Epitaxi [2011-09-17] |
| Defect Reduction in Semipolar (11-22) GaN Grown on m-Sapphire Using Epitaxial Lateral Overgrowth 作者: Lee Sung-Nam; Kim Jihoon; Kim Hyunsoo 来源出版物: JOURNAL OF THE ELECTROCHEMICAL SOCIETY 卷: 158 期: 10 页: H994-H996 DOI: 附件下载 |
