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Silicon-doping induced strain of AlN layers: a comparative luminescence and
[2011-11-02]

Silicon-doping induced strain of AlN layers: a comparative luminescence and Raman study (pages 215–217)
Günther M. Prinz, Martin Feneberg, Martin Schirra, Rolf Sauer, Klaus Thonke, Sarad B. Thapa and Ferdinand Scholz
Phys. Status Solidi (RRL) 2, 215


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