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Benchmarking beta-Ga2O3 Schottky Diodes by Nanoscale Ballistic Electron Emission Microscopy [2020-05-25] |
| Benchmarking beta-Ga2O3 Schottky Diodes by Nanoscale Ballistic Electron Emission Microscopy 作者:Buzio, R (Buzio, Renato)[ 1 ] ; Gerbi, A (Gerbi, Andrea)[ 1 ] ; He, QM (He, Qiming)[ 2 ] ; Qin, Y (Qin, Yuan)[ 2 ] ; Mu, WX (Mu, Wenxiang)[ 3,4 ] ; Jia, ZT (Jia, Zhitai)[ 3,4 ] ; Tao, XT (Tao, Xutang)[ 3,4 ] ; Xu, GW (Xu, Guangwei)[ 5 ] ; Long, SB (Long, Shibing)[ 5 ] ADVANCED ELECTRONIC MATERIALS 卷: 6 期: 3 文献号: 1901151 DOI: 10.1002/aelm.201901151 出版年: MAR 2020 在线发表日期: JAN 2020
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