|
Investigation of defect formation in 4H-SiC(0001) and (000-1) epitaxy [2010-04-29] |
Investigation of defect formation in 4H-SiC(0001) and (000-1) epitaxy
作者：Tsuchida, H.; Kamata, I.; Nagano, M.
来源出版物: Materials Science Forum 卷: 600-603 页: 267-72 出版年: 2009
附件下载
|
