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Ion Beam Control and Transistor Characteristics for 45 nm Source‐Drain Exte [2012-03-23] |
| Ion Beam Control and Transistor Characteristics for 45 nm Source‐Drain Extension Formation AIP Conf. Proc. 1066, pp. 26-29; doi:http://dx.doi.org/10.1063/1.3033611 (4 pages) ION IMPLANTATION TECHNOLOGY: 17th International Conference on Ion Implantation Technology Date: 8–13 June 2008 Location: Monterey (California) K. Okabe1, M. Nishikawa1, K. Ikeda2, H. Kurata2, T. Mori1, S. Satoh2, and M. Kase 附件下载 |
