首 页 >> 单篇全文
Effect of In and Al content on characteristics of intrinsic defects in GaAs [2010-03-22] |
| 题目：Effect of In and Al content on characteristics of intrinsic defects in GaAs-based quantum dots 作者: Bezyazychnaya TV, Zelenkovskii VM, Ryabtsev GI, Sobolev MM 来源出版物: Semiconductors 卷: 38 期: 2 页: 209-212 出版年: 2004 附件下载 |
