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HOLE TRAPPING BY BORON ATOMS IN SILICON AT LOW-TEMPERATURES [2012-11-22] |
HOLE TRAPPING BY BORON ATOMS IN SILICON AT LOW-TEMPERATURES
作者: GODIK, EE (GODIK, EE); KURITSYN, YA (KURITSYN, YA); SINIS, VP (SINIS, VP)
来源出版物: SOVIET PHYSICS SEMICONDUCTORS-USSR 卷: 12 期: 1 页: 51-53 出版年: 1978
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